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The DRA9123Y0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter saturation voltage (Vce(sat)) of 0.4 V at an IC of -50 mA and IB of -5 mA. The device supports a maximum collector current (IC) of 0.1 A and a collector-emitter breakdown voltage (V(BR)CEO) of 50 V. It utilizes the SSSMini3 package with dimensions of 1.6 x 1.6 mm. The component is RoHS compliant and halogen-free.
Verify the specific ordering suffix to confirm package dimensions and compliance status. Ensure the requested variant matches the required pin configuration and thermal characteristics. Cross-reference the manufacturer's latest datasheet revision to confirm active status and availability constraints before finalizing procurement plans.
Select this component when a compact PNP switching solution with integrated biasing is required. Compare the 1.6x1.6mm package size against space-constrained designs. Verify that the 50V rating and 0.1A current limit meet the circuit requirements. Consider the low Vce(sat) for power efficiency in battery-operated devices.
This part belongs to Panasonic's series of transistors with built-in resistors. It serves as a simplified switching element for digital applications. The DRA9123Y0L variant specifically denotes the 1.6x1.6mm package version, distinguishing it from other package sizes within the same electrical family.
Check for direct substitutes like DRA9123Y if package compatibility allows. Verify electrical parameters such as Vce(sat) and hFE against alternative PNP digital transistors. Ensure the replacement maintains the same pinout and package footprint for seamless integration.