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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
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Overview
The DRDNB16W-7 is a pre-biased NPN transistor with an integrated switching diode, manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in a surface-mount SOT-363 package. The device features built-in bias resistors: R1 is 1 kΩ and R2 is 10 kΩ. Maximum ratings include a collector current of 600 mA, a supply voltage of 50 V, and power dissipation of 200 mW at 25°C. The gain-bandwidth product is 200 MHz, and the operating temperature range spans from -55°C to +150°C.
Feature Summary
- Integrates one NPN transistor and one switching diode within a single compact package
- Includes internal base and emitter bias resistors for simplified circuit design
- Utilizes lead-free, halogen-free, and antimony-free green molding compound
Applications
- Current sink configuration for relay drivers
- Automotive applications requiring specific change control
- General purpose switching circuits
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated distributors or certified manufacturing facilities. Confirm RoHS 3 compliance and check for AEC-Q100/101 qualification if automotive standards are required. Review the latest datasheet revision for any updates to electrical characteristics or mechanical dimensions before finalizing procurement specifications.
Selection Notes
Select this component when a compact solution combining an NPN driver and a flyback diode is necessary. Ensure the 50V supply voltage and 600mA collector current meet the load requirements. Verify that the 1kΩ and 10kΩ internal resistors provide appropriate base drive currents for the intended application without exceeding the maximum input voltage limits.
Part Context
This part belongs to the DRDxxxxW series of complex arrays designed specifically for relay drivers. It consolidates discrete components into a single SOT-363 footprint, reducing board space and assembly complexity compared to using separate transistors and diodes.
Replacement Considerations
Consult official documentation for direct substitutes. Cross-referencing requires matching the NPN polarity, integrated diode function, SOT-363 package, and identical resistor values (1kΩ/10kΩ).
FAQ
What are the values of the internal bias resistors?
The internal bias resistors are R1 = 1 kΩ and R2 = 10 kΩ.
Is the device suitable for high-temperature environments?
Yes, the device supports an operating and storage temperature range from -55°C to +150°C.
What is the reverse recovery time of the integrated switching diode?
The reverse recovery time (trr) is typically 4.0 ns under standard test conditions.
