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The DRDNB26W-7 is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It integrates internal bias resistors and a protection diode within a single SOT-363 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 600 mA. Key electrical specifications include a transition frequency of 200 MHz, a DC current gain of 47 at 50 mA and 5 V, and a maximum power dissipation of 200 mW. Internal resistances consist of a base resistor of 1 kΩ and an emitter resistor of 10 kΩ.
Verify the specific suffix 'W-7' to confirm the tape-and-reel packaging configuration intended for automated surface-mount assembly. Ensure that the procurement documentation explicitly references the integrated 1 kΩ base and 10 kΩ emitter resistor values, as these are critical for matching the original circuit design requirements during replacement or sourcing phases.
Select this component when a compact NPN switching solution with integrated biasing is required. The SOT-363 package is suitable for space-constrained designs. Consider the 50 V breakdown voltage and 600 mA current rating to ensure compatibility with the target load. Verify thermal management capabilities given the 200 mW power dissipation limit in the small outline package.
This part belongs to the DRDNB series of pre-biased transistors from Diodes Incorporated. These devices combine discrete transistor functionality with passive components to streamline board layout. The SOT-363 housing provides a standardized footprint compatible with existing surface-mount manufacturing processes used across consumer electronics and industrial control systems.
Compatible substitutes include DRDPB26W-7 (PNP variant) and DRDNB16W-7 (NPN variant). Verify pinout compatibility and electrical ratings before substitution.