DRDPB16W-7

Overview

The DRDPB16W-7 is a single pre-biased NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It integrates internal base resistor R1 and emitter resistor R2 within a compact SOT-363 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 600 mA, and a transition frequency (fT) of 200 MHz. The device features a typical DC current gain (hFE) of 100 at 50 mA and 5 V, with a maximum collector cutoff current of 500 nA. Power dissipation is rated at 200 mW, and it operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrated biasing network reduces external component count and PCB space requirements.
• High-speed switching capability suitable for high-frequency digital applications.
• Compact SOT-363 package design facilitates automated surface-mount assembly.

Applications

• Relay driver circuits requiring fast switching speeds.
• General-purpose digital switching in consumer electronics.
• Interface logic level translation between microcontrollers and peripheral devices.

Procurement Notes

Verify the specific suffix 'W-7' against the manufacturer's latest datasheet to confirm packaging configuration and tape-and-reel specifications. Ensure RoHS compliance status matches project requirements by checking the official environmental declaration. Confirm availability through authorized distributors as lead times may vary based on production cycles.

Selection Notes

Select this component when a single NPN transistor with integrated biasing resistors is required for space-constrained designs. Compare the 50 V VCEO and 600 mA Ic ratings against circuit load requirements. Consider the SOT-363 footprint compatibility during PCB layout phase. Evaluate thermal management needs given the 200 mW power dissipation limit in enclosed environments.

Part Context

This part belongs to the DRD series of pre-biased transistors from Diodes Incorporated. It shares the SOT-363 package form factor with other variants in the family but differs in internal resistance values and polarity. The 'N' designation indicates NPN configuration, distinguishing it from PNP counterparts like the DRDP series.

FAQ

What are the internal resistor values for the DRDPB16W-7?

The datasheet specifies integrated base (R1) and emitter (R2) resistors, though exact nominal values should be confirmed in the official electrical characteristics table.

Is the DRDPB16W-7 suitable for high-temperature environments?

Yes, the device is rated for operation up to +150°C junction temperature, making it suitable for demanding thermal conditions.

How does the SOT-363 package affect thermal performance?

The small outline package limits heat dissipation capacity; designers must ensure adequate PCB copper area for thermal management under full load.