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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased + Diode
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：220 Ohms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
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Overview
The DRDPB26W-7 is a single PNP pre-biased bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It integrates internal base and emitter resistors to simplify circuit design. The device supports a maximum collector current of 600 mA and a collector-emitter breakdown voltage of 50 V. Key electrical parameters include a DC current gain (hFE) of at least 47 at 50 mA and 5 V, with a saturation voltage of 300 mV maximum at 2.5 mA base current. The unit features an internal base resistor (R1) of 220 Ohms and an emitter resistor (R2) of 4.7 kOhms. It operates within a transition frequency of 200 MHz and dissipates up to 200 mW of power. The component is housed in a surface-mount SOT-363 package.
Feature Summary
- Integrates PNP BJT with built-in base and emitter resistors for simplified biasing
- Includes integrated protection diode for enhanced circuit reliability
- Optimized for high-speed switching applications with 200 MHz transition frequency
- Compact SOT-363 surface-mount packaging for space-constrained designs
Applications
- Switch-relay driver circuits
- General-purpose digital switching
- Logic interface buffering
Procurement Notes
Verify the specific ordering suffix and manufacturer part number against official Diodes Incorporated documentation before procurement. Confirm that the received components match the specified SOT-363 package and electrical characteristics. Ensure compliance with RoHS3 standards as indicated in public datasheets. Cross-reference distributor listings with the original manufacturer's catalog to avoid counterfeit parts.
Selection Notes
Select this component when a PNP pre-biased transistor with integrated resistors is required for driving loads such as relays or logic gates. The 220 Ohm base resistor and 4.7 kOhm emitter resistor values are fixed; verify compatibility with the target control signal levels. Consider the 50 V collector-emitter voltage rating and 600 mA current capacity against the application's peak requirements. The SOT-363 package dictates the PCB footprint constraints.
Part Context
The DRDPB26W-7 belongs to the DRDP series of pre-biased transistors from Diodes Incorporated. This series combines NPN or PNP transistors with internal resistors and sometimes protection diodes in compact packages like SOT-363. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity in digital and analog switching applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical specifications if considering alternative manufacturers' pre-biased transistors.
