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The DS1314S-2+ is a CMOS nonvolatile memory controller designed to convert standard CMOS SRAM into nonvolatile memory. It operates within an industrial temperature range of -40°C to +85°C and supports supply voltages of 3.0V to 3.6V (with TOL pin grounded) or 2.7V to 3.3V (with TOL pin connected to VCCO). The device utilizes an 8-pin SOIC package. Key electrical characteristics include operating currents of 50µA to 200µA for TTL inputs and 30µA to 100µA for CMOS inputs. It provides automatic power-fail detection, battery backup switching with less than 0.2V drop, and lithium cell monitoring.
Verify the specific ordering suffix and RoHS compliance status against the manufacturer's current documentation. Confirm the package type matches the required footprint, as the DS1314 series includes multiple pin configurations. Ensure the TOL pin connection aligns with the target supply voltage threshold requirements for your specific application design.
Select this component when converting CMOS SRAM to nonvolatile storage is required. Choose based on the necessary supply voltage range; connect the TOL pin to GND for 3.3V nominal systems or to VCCO for 3.0V nominal systems. Consider the 8-pin SOIC package constraint versus other available variants if additional reset outputs or different form factors are needed.
The DS1314S-2+ belongs to the DS1314 family of nonvolatile controllers manufactured by Analog Devices Inc./Maxim Integrated. This family addresses the challenge of maintaining data integrity in volatile memory during power interruptions. The series offers various package options including DIP, SOIC, and TSSOP to accommodate different board space and integration requirements.
DS1314S+