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Product Detailed Parameters
- Description：JFET N-CH 30MA SSMINI3-F3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：55 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 10 V
- Current Drain (Id) - Max：30 mA
- Voltage - Cutoff (VGS off) @ Id：5 V @ 10 µA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：125 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：SSMini3-F3-B
- Grade：-
- Qualification：-
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Overview
The DSK9J01P0L is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Panasonic Electronic Components. It features a maximum drain current of 30 mA and a power dissipation rating of 125 mW. The device is designed for surface-mount applications, utilizing the SSMini3-F3-B package configuration. This component belongs to the discrete semiconductor JFET and HEMT/HFET product range, offering standard electrical characteristics suitable for general-purpose switching and amplification tasks within specified thermal and voltage limits.
Feature Summary
- N-channel junction field-effect transistor architecture
- Surface-mount design in compact SSMini3-F3-B package
- Optimized for low-power signal processing applications
Applications
- General-purpose signal amplification circuits
- Low-noise analog switching applications
- High-reliability electronic assemblies
Procurement Notes
Verify the specific ordering suffix and package variant against official Panasonic documentation to ensure compatibility with your assembly process. Confirm RoHS compliance status and lead time requirements directly with authorized distributors or the manufacturer prior to procurement. Ensure that storage and handling conditions adhere to industry standards for moisture-sensitive devices to maintain component integrity during installation.
Selection Notes
Select this component based on its N-channel configuration and 30 mA current capability. Evaluate the SSMini3-F3-B footprint against your PCB layout constraints. Consider the 125 mW power dissipation limit when designing thermal management strategies. Compare performance metrics against alternative JFETs if higher current or different packaging is required for your specific circuit topology.
Part Context
This part belongs to Panasonic's discrete semiconductor portfolio, specifically within the JFET category. It complements other high-electron-mobility transistors (HEMT/HFET) offered by the manufacturer. The DSK9J01 series provides standardized solutions for engineers requiring reliable, surface-mountable field-effect transistors for consumer and industrial electronics.
Replacement Considerations
DSK9J01Q0L is a related variant within the same family. Verify pinout compatibility and specific electrical parameter differences before substitution. No direct public substitute part numbers are confirmed in the provided data.
