Single Bipolar Transistors DSM80101M-7 product image

DSM80101M-7

$0.35
  • Description:TRANS NPN 80V 0.5A SOT-26
  • Series:-

SKU:e85c6c4fa7be Category: Brand:

  
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DSM80101M-7 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 80V 0.5A SOT-26. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for DSM80101M-7

  • Description:TRANS NPN 80V 0.5A SOT-26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN + Diode (Isolated)
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10mA, 1V
  • Power - Max:600 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-26
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for DSM80101M-7

DSM80101M-7

Single Bipolar Transistors Overview

The DSM80101M-7 is a surface-mount NPN bipolar junction transistor with an integrated isolated diode, manufactured by Diodes Incorporated. It features an SOT-26 package and supports a maximum collector current of 500 mA with a collector-emitter breakdown voltage of 80 V. The device dissipates up to 600 mW of power and operates within a temperature range of -65°C to 150°C. Key electrical characteristics include a DC current gain (hFE) of at least 120 at 10 mA and 1 V, and a saturation voltage of 300 mV at 10 mA base and 100 mA collector currents.

Single Bipolar Transistors Feature Summary

  • Integrates an NPN transistor with an isolated diode in a single compact surface-mount package
  • Provides high current handling capability suitable for switching applications
  • Operates reliably across a wide industrial temperature range

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Driver stages for low-power loads
  • Signal processing interfaces requiring isolation

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors as the part is obsolete. Confirm package integrity and pin alignment against the SOT-26 specification before soldering. Ensure storage conditions prevent moisture damage given the surface-mount nature. Cross-reference datasheets for thermal resistance values during PCB layout planning.

Single Bipolar Transistors Selection Notes

Select this component when a combined NPN switch and isolated diode function is required in a minimal footprint. Evaluate the 80 V breakdown voltage against circuit peak voltages. Consider the 500 mA current limit for load requirements. Compare thermal performance in the SOT-26 package against alternative packages if heat dissipation is critical.

Single Bipolar Transistors Part Context

This component belongs to the discrete semiconductor category, specifically within the dual bipolar transistor family. It serves as a legacy solution for designs requiring integrated switching and protection elements. The SOT-26 package allows for space-constrained board layouts compared to larger transistor arrays.

Single Bipolar Transistors Replacement Considerations

The NSM80101MT1G from onsemi is a confirmed direct substitute. Verify pin compatibility and electrical specifications match the original design requirements before implementation.

DSM80101M-7DSM80101M-7
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