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The DST847BPDP6-7 is a complementary small-signal transistor array manufactured by Diodes Incorporated, featuring an NPN and PNP pair within a SOT-963 package. It supports a maximum collector current of 100 mA with a collector-emitter breakdown voltage (BVCEO) of 45 V for both polarities. The device offers a power dissipation rating of 300 mW and operates across a temperature range of -55°C to +150°C. Key electrical parameters include a DC current gain (hFE) minimum of 200 at 2 mA, a transition frequency (fT) of 100 MHz, and low saturation voltages of 125 mV (NPN) and 500 mV (PNP) at full load.
Verify the specific ordering suffix '-7' corresponds to the 10,000-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the 'TC' marking code matches the intended production batch requirements. Ensure compliance with the specified halogen-free and antimony-free material definitions during component qualification.
Select this component when a matched NPN/PNP pair is required in a space-constrained surface-mount application. The SOT-963 package provides a significantly smaller footprint compared to traditional SOT-23 packages while maintaining similar electrical performance. Consider the 300 mW power dissipation limit and thermal resistance characteristics for high-density PCB layouts.
This part belongs to the DST847 series of complementary small-signal transistors produced by Diodes Incorporated. It serves as a modern alternative to legacy dual transistor packages, offering improved board space efficiency through its SOT-963 form factor. The series is designed for general-purpose applications requiring reliable switching and amplification capabilities.
Direct pin-compatible replacements may include other SOT-963 complementary transistor arrays from different manufacturers, provided they meet or exceed the 45V BVCEO, 100mA IC, and 300mW PD specifications. Verify hFE binning and saturation voltage limits to ensure circuit compatibility.