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The DTA043EEBTL is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors within an EMT3F (SOT-416FL) surface-mount package. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes a base resistor (R1) of 4.7 kOhms and an emitter resistor (R2) of 4.7 kOhms, resulting in a typical resistance ratio of 1. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 5 mA and 10 V, a transition frequency of 250 MHz, and a maximum power dissipation of 150 mW. The unit supports operation up to +150°C.
Verify the specific suffix EBTL against the manufacturer's datasheet to confirm the exact pinout and internal resistor configuration. Ensure the ordering code matches the required EMT3F packaging format. Confirm RoHS compliance status directly from the official documentation before procurement.
Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. Compare the 4.7 kOhm resistor values against application requirements to ensure proper drive current levels. Verify that the 150 mW power dissipation rating meets the thermal constraints of the target PCB layout.
This part belongs to the DTC043 series of digital transistors from ROHM. It shares the same core transistor structure as other variants in the family but differs in its specific internal resistor network and packaging designation. The EMT3F package is a standard small-outline form factor used across multiple ROHM discrete semiconductor products.
Direct substitutes may include other NPN digital transistors with similar 50V ratings and 100mA current capacity. Verify equivalent resistor ratios and hFE specifications. Check for compatible SOT-416 or SC-89 footprint alternatives if pin compatibility is critical.