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The DTA113EET1G is a single NPN digital transistor manufactured by onsemi, housed in an SC-75 (SOT-416) surface-mount package. It integrates internal bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance (R1) of 1 kOhm and an emitter-base resistance (R2) of 10 kOhms. Power dissipation is rated at 200 mW, with a DC current gain (hFE) minimum of 80. Operating temperature ranges from -55°C to +150°C.
Verify the specific suffix ET1G against the manufacturer's latest datasheet to confirm pinout compatibility and packaging type. Ensure the component meets RoHS directives if required by the target application. Cross-reference the ordering number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a single NPN digital transistor with 1k/10k ohm bias resistors is required. Verify that the 50V voltage rating and 100mA current capacity meet the circuit demands. Consider the SC-75 package size constraints during PCB layout planning.
This part belongs to the DTA113 series of pre-biased transistors from onsemi. These components are designed to replace individual transistors and their associated external biasing resistors, reducing board space and assembly costs. The series includes complementary PNP variants such as the DTA113EET1G counterpart.
Compatible substitutes include other NPN digital transistors with identical 1k/10k resistor ratios and similar voltage/current ratings. Verify package compatibility and thermal characteristics when replacing.