DTA113EM3T5G

Overview

The DTA113EM3T5G is a single PNP digital transistor (BRT) manufactured by onsemi, housed in an SOT-723 surface-mount package. It integrates internal biasing resistors: R1 is 1 kOhm and R2 is 1 kOhm. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 260 mW. DC current gain (hFE) is specified as a minimum of 3 at Ic=5mA, Vce=10V. Saturation voltage is max 250mV at Ib=5mA, Ic=10mA. Collector cutoff current is max 500nA. Operating temperature ranges from -55°C to +150°C. It complies with RoHS3 standards.

Feature Summary

• Integrates dual biasing resistors (R1 and R2) to simplify circuit design and reduce component count.
• Provides high-density packaging in the compact SOT-723 form factor for space-constrained applications.
• Features wide operating temperature range suitable for demanding industrial environments.

Applications

• General-purpose switching circuits requiring integrated base biasing.
• Interface logic level translation between microcontrollers and peripheral devices.
• Driver stages for low-power loads in consumer electronics.

Procurement Notes

Verify the complete part number including the suffix T5G to ensure correct tape-and-reel packaging configuration. Confirm RoHS3 compliance status if required by specific environmental regulations. Check datasheet for absolute maximum ratings to prevent overstress during operation. Validate pinout compatibility with existing PCB footprints before finalizing procurement decisions.

Selection Notes

Select this PNP variant when negative logic control or high-side switching is required. Compare internal resistor values against other DTA series members to match specific drive current requirements. Ensure the 50V breakdown voltage exceeds the maximum circuit voltage. Consider the SOT-723 thermal characteristics for power dissipation limits in enclosed spaces.

Part Context

This component belongs to the DTA113 series of pre-biased transistors from onsemi. It is part of a broader family of digital transistors that integrate fixed resistor networks. The EM3 suffix indicates lead-free composition and specific manufacturing traceability. It serves as a direct replacement for older discrete BJT and resistor combinations in legacy designs.

Replacement Considerations

Compatible substitutes include other PNP digital transistors with similar 50V/100mA ratings and SOT-723 packages, such as DTA113 variants from other manufacturers. Verify resistor ratios and hFE gains match original design specifications. Ensure thermal performance and pinout alignment are identical to avoid PCB redesign.