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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A EMT3
- Series：DTC113Z
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
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Overview
The DTA113ZE3TL is a PNP digital transistor from the ROHM Semiconductor DTA113Z series, housed in an EMT3 (SOT-416) surface-mount package. It integrates bias resistors with typical values of R1 = 1.0 kΩ and R2 = 10 kΩ. The device supports a supply voltage (VCC) of -50 V and a maximum collector current (IC) of -100 mA. Key electrical characteristics include a DC current gain (GI) of at least 33 at -5 V and -5 mA, a transition frequency (fT) of 250 MHz, and a power dissipation (PD) of 150 mW. The output voltage (VO(on)) is typically -100 mV at -10 mA.
Feature Summary
- Built-in biasing resistors enable inverter circuit configuration without external input components.
- Simplifies circuit design by requiring only on/off condition settings for operation.
- Complementary NPN types are available within the DTC113Z series.
Applications
- Inverter circuits
- Interface applications
- Driver circuits
Procurement Notes
Verify the specific ordering suffix to confirm the packaging format, as the base part number may be supplied in different reel or cut tape configurations. Confirm RoHS compliance status directly with the manufacturer's latest documentation before finalizing procurement specifications.
Selection Notes
Select this component when a compact PNP digital transistor with integrated biasing is required for space-constrained designs. Ensure the operating voltage does not exceed the -50 V limit and that the thermal environment allows for 150 mW power dissipation. Verify compatibility with the complementary DTC113Z series if both polarities are needed.
Part Context
This component belongs to the DTA113Z series of digital transistors manufactured by ROHM Semiconductor. The series includes various packages such as SOT-723, SOT-323, and SOT-346, offering flexibility for different board layouts while maintaining consistent electrical performance across the family.
Replacement Considerations
DTA113ZEB
FAQ
What is the resistance ratio between R2 and R1?
The typical resistance ratio (R2/R1) is 10, with R1 being 1.0 kΩ and R2 being 10 kΩ.
What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150 °C.
Is this component suitable for automotive applications?
No, this product is classified as standard grade and is not recommended for use in automotive equipment.
