SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTA113ZETL is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates in the SOT-416 (EMT3) surface-mount package with three terminals. Key electrical parameters include a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device incorporates an input resistor (R1) of 1 kΩ and an emitter-base resistor (R2) of 10 kΩ, yielding a typical resistance ratio of 10. Minimum DC current gain (hFE) is specified as 33 at -5 mA and -5 V. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.
Verify the specific suffix 'TL' against the manufacturer's official datasheet to confirm reel quantity and tape specifications. Ensure the component meets RoHS compliance requirements for the target assembly process. Cross-reference the ordering code with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a PNP digital transistor with a 1 kΩ input resistor is required. Verify that the -50 V collector-emitter voltage and -100 mA current ratings exceed the application's peak demands. Confirm compatibility with the SOT-416 footprint and ensure the 150 mW power dissipation rating suits the thermal environment.
This part belongs to ROHM's standard digital transistor series, which combines bipolar transistors with integrated biasing resistors. The DTA113ZE variant specifically uses the SOT-416 package. It is categorized as a standard-grade product intended for general electronic equipment rather than automotive applications.
Complementary NPN types such as DTC113ZE may be considered for differential signaling. Other PNP digital transistors from the same family with identical resistor ratios and package dimensions can serve as direct replacements if pinout compatibility is confirmed.