DTA113ZUAT106

Overview

The DTA113ZUAT106 is a PNP bias resistor built-in transistor (BRT) manufactured by ROHM Semiconductor. It integrates a single NPN transistor with two internal resistors: R1 of 1 kΩ and R2 of 10 kΩ, yielding a typical resistance ratio of 10. The device operates with a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 33 at -5 mA and -5 V, a transition frequency (fT) of 250 MHz, and a power dissipation (Pd) of 200 mW. It is housed in the SOT-323 (UMT3) surface-mount package.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors to simplify circuit design and reduce component count.
• Features a low saturation voltage for efficient switching performance.
• Designed for high-speed applications with a transition frequency of 250 MHz.

Applications

• Switching circuits in portable electronic devices.
• Driver stages for logic interfaces and level shifting.
• General-purpose amplification and switching in consumer electronics.

Procurement Notes

Verify the specific suffix 'UAT' against official ROHM documentation to confirm the exact tape-and-reel packaging configuration and moisture sensitivity level. Ensure compatibility with standard SMT assembly processes for the SOT-323 package. Cross-reference the manufacturer part number with authorized distributors to confirm availability and lead times, as suffixes often denote specific shipping or handling requirements.

Selection Notes

Select this component when a compact PNP BRT with a 1 kΩ base resistor is required. The 10 kΩ emitter resistor provides a fixed bias ratio suitable for standard logic levels. Consider the 200 mW power dissipation limit and the -50 V voltage rating during thermal and voltage stress analysis. Compare with other DTA113 variants if different resistor values or packages like SOT-416 are needed.

Part Context

This part belongs to the ROHM DTx series of digital transistors, which combine bipolar junction transistors with integrated bias networks. The DTA113ZUAT106 specifically utilizes the UMT3 (SOT-323) package, offering a small footprint ideal for space-constrained designs. It is part of a broader family of pre-biased transistors designed to replace discrete resistor-transistor combinations.

Replacement Considerations

Direct substitutes within the same package and electrical specifications include DTA113ZU3T106 and DTA113ZU3HZGT106. Verify that alternative parts maintain the same 1 kΩ/10 kΩ resistor ratio and SOT-323 footprint. Check for any differences in hFE grading or automotive qualification (AEC-Q101) if applicable to the target application.