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The DTA114EBT2L is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates with a collector-emitter voltage of -50V and a continuous collector current of -50mA. The device includes an input resistor (R1) of 10kΩ and an emitter-base resistor (R2) of 10kΩ. Key electrical parameters include a minimum DC current gain (hFE) of 30 at -1mA and -5V, a transition frequency of 250MHz, and a maximum power dissipation of 150mW. It is housed in the EMT3 surface-mount package.
Verify the specific suffix 'BT2L' against official ROHM documentation to confirm tape-and-reel packaging details and exact marking codes. Ensure compatibility with existing PCB footprints designated for the EMT3 package type before finalizing procurement orders.
Select this component for designs requiring a PNP digital transistor with integrated 10kΩ biasing resistors. Verify that the -50V VCEO and -50mA Ic ratings meet the system's voltage and current requirements. Confirm thermal management capabilities align with the 150mW power dissipation limit in the intended operating environment.
This part belongs to the DTA114 series of pre-biased transistors from ROHM. These devices are engineered to replace discrete resistor-transistor combinations, reducing board space and assembly costs. The EMT3 package offers a small form factor suitable for dense consumer electronics layouts.
Check for direct substitutes within the DTA114 family or equivalent PNP digital transistors from other manufacturers. Ensure pinout compatibility and identical resistor values (R1/R2) when considering alternatives.