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The DTA114EE3HZGTL is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in biasing resistors in an SMD package. It operates with a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device includes two internal resistors: R1 (base) at 10 kOhms and R2 (emitter) at 10 kOhms. Key electrical parameters include a DC current gain (hFE) minimum of 30 at -5 mA and -5 V, a transition frequency of 250 MHz, and power dissipation of 150 mW. It supports AEC-Q101 automotive qualification and functions within a maximum operating temperature range up to +150°C.
Verify the specific ordering suffix to confirm package dimensions and tape-and-reel specifications. Confirm AEC-Q101 compliance requirements against the latest manufacturer datasheet before finalizing procurement. Ensure storage conditions align with moisture sensitivity levels defined in the product documentation.
Select this component when a PNP configuration with equal 10 kOhm biasing resistors is required. Compare hFE values and saturation voltages against alternative models if higher gain or lower voltage drop is necessary. Verify that the SOT-416 footprint matches the target PCB layout constraints.
This part belongs to the DTA114 series of pre-biased transistors from ROHM. It serves as a compact solution for replacing discrete resistor-transistor combinations. The series is designed for surface-mount assembly, offering space savings in dense electronic assemblies.
DTA114EUAFRA shares similar pinout and electrical characteristics but utilizes a SOT-323 package. DTA114EE3HZGT is a related variant within the same family. Verify package compatibility and exact resistance tolerances before substitution.