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The DTA114EE3TL is a PNP digital transistor from the ROHM Semiconductor DTA114E series, housed in an SOT-416 (EMT3) surface-mount package. It integrates biasing resistors with R1 and R2 both at 10 kΩ. The device supports a supply voltage of -50 V and a maximum collector current of -100 mA. Key electrical characteristics include a DC current gain (GI hFE) of 30 minimum at -5 V output and -5 mA output current, and a transition frequency of 250 MHz. Power dissipation is rated at 150 mW, with a junction temperature limit of 150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific automotive qualification requirements if applicable to your system. Ensure storage conditions remain within recommended humidity and temperature limits to maintain solderability before use.
Select this component when a compact PNP digital transistor with integrated 10kΩ biasing resistors is required. The SOT-416 package suits space-constrained designs. Verify that the -50V supply rating and -100mA current capacity align with the target application's electrical demands.
This part belongs to the DTA114E series of digital transistors manufactured by ROHM Semiconductor. The series includes various packages such as SOT-723, SOT-416FL, and SOT-323, offering different power dissipation ratings and physical dimensions while maintaining consistent electrical performance characteristics across the family.
DTA114EEBTL
The resistance ratio R2/R1 is typically 1.0, with R1 and R2 both being 10 kΩ.
The input voltage range is specified from -40 V to 10 V.
The output voltage VO(on) is typically -100 mV under conditions of IO = -10 mA and II = -0.5 mA.