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DTA114EEBHZGTL is a PNP digital transistor with built-in bias resistors, qualified under AEC-Q101. It operates with a supply voltage of -50 V and a maximum collector current of -100 mA. The device features input resistance R1 and emitter-base resistance R2, both nominally 10 kΩ. Power dissipation is rated at 150 mW. Transition frequency reaches 250 MHz. DC current gain (GI hFE) is a minimum of 30. Storage temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and availability status. Confirm that the component meets all required automotive standards before finalizing procurement plans. Ensure compatibility with existing inventory management systems.
Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. Verify that the -50 V supply voltage and -100 mA current limits align with the target application requirements. Consider the SOT-416 package dimensions for PCB layout planning.
The DTA114EEBHZGTL belongs to the DTA114 series of digital transistors manufactured by ROHM Semiconductor. This series integrates NPN or PNP transistors with built-in bias resistors to simplify circuit design. The EEA variant specifically denotes the PNP type with equal resistor values.
DTC114EEFRA is the complementary NPN type within the same family. Verify pinout and electrical characteristics before substitution. Consult official ROHM documentation for approved alternative part numbers.
Both the input resistance (R1) and the emitter-base resistance (R2) have nominal values of 10 kΩ.
Yes, the DTA114EEBHZGTL is qualified under the AEC-Q101 standard for automotive grade reliability.
The maximum power dissipation is 150 mW when mounted on a reference land at an ambient temperature of 25°C.