DTA114EET1G

Overview

The DTA114EET1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). Both resistors are nominally 10 kΩ. The device operates with a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It features a DC current gain (hFE) ranging from 35 to 60 at 5.0 mA and 10 V. Power dissipation is rated at 200 mW at 25°C, derating by 1.6 mW/°C above this temperature. The junction and storage temperature range spans from -55°C to +150°C. It is housed in an SC-75 package.

Feature Summary

• Integrates a PNP transistor with internal bias resistors to replace discrete components
• Simplifies circuit design and reduces board space requirements
• AEC-Q101 qualified for automotive applications requiring unique site control
• Compliant with RoHS standards and free of lead, halogens, and brominated flame retardants

Applications

• Automotive electronics systems requiring AEC-Q101 qualification
• General-purpose switching applications replacing discrete bias networks
• Digital logic interface circuits for signal level translation

Procurement Notes

Verify the specific ordering suffix 'ET1G' corresponds to the SC-75 package and tape & reel shipping configuration as documented in the official datasheet. Confirm that the NSV prefix variant meets any specific automotive site or control change requirements if applicable to the target application. Ensure compliance with Pb-free and RoHS specifications during procurement validation.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required for low-current switching. The 10 kΩ internal resistor values simplify base drive calculations. Consider the SC-75 package dimensions for PCB layout constraints. Verify thermal performance against the derating curve if operating above 25°C ambient temperature to ensure power dissipation limits are not exceeded.

Part Context

This part belongs to the DTA114E/D digital transistor family, which includes variants like MUN2111 and DTA114EM3. These devices share the same functional architecture but differ in packaging options such as SOT-23, SC-59, and SOT-723. The DTA114EET1G specifically utilizes the SC-75 case outline, offering a distinct footprint compared to other family members while maintaining identical electrical characteristics and resistor ratios.

Replacement Considerations

Direct substitutes include other DTA114E variants with different packages, such as DTA114EM3T5G (SOT-723) or MUN2111T1G (SC-59), provided the mechanical fit allows. Cross-reference with NSVDTA114EET1G for automotive-specific supply chain requirements. Ensure any replacement maintains the 10 kΩ R1/R2 ratio and PNP polarity.