DTA114EM3T5G

Overview

The DTA114EM3T5G is a single PNP Bias Resistor Transistor (BRT) featuring an integrated monolithic bias network with R1 and R2 resistors. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device includes a typical base resistor of 10 kOhms and a resistor ratio of 1. Packaged in SOT-723, it dissipates up to 260 mW at 25°C. DC current gain ranges from 35 to 60. Operating temperature spans -55°C to +150°C.

Feature Summary

• Integrates a single transistor with a monolithic bias network consisting of series base and base-emitter resistors to replace discrete components.
• Reduces board space and component count by eliminating external resistor bias networks.

Applications

• Interface circuits
• Driver applications
• Inverter configurations

Procurement Notes

Verify the specific ordering suffix 'T5G' corresponds to the 8000-unit tape and reel packaging configuration. Confirm RoHS compliance and Pb-free status through official manufacturer documentation or certified distributor declarations prior to procurement.

Selection Notes

Select this component for designs requiring a compact PNP switching solution with built-in biasing. Ensure the required DC current gain meets the minimum threshold of 35 under the intended operating conditions. Verify that the thermal dissipation requirements fit within the SOT-723 package limits.

Part Context

This part belongs to the DTA114E digital transistor series manufactured by onsemi. It is listed alongside related devices such as MUN2111 and DTA114EE in the same datasheet publication. The product is designed to simplify circuit design by integrating bias resistors directly into the transistor package.

Replacement Considerations

Consult the manufacturer's discontinuation notice for potential obsolescence. Verify pinout compatibility if substituting with other BRT packages like SC-75 or SOT-23 variants.