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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.05A SPT
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：50 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：300 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：SC-72 Formed Leads
- Supplier Device Package：SPT
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Overview
The DTA114ESATP is a PNP digital transistor with built-in resistors, manufactured by ROHM Semiconductor. It features an SPT (SOT-323) surface-mount package. Key electrical parameters include a collector-emitter voltage of -50V and a continuous collector current of -100mA. The device incorporates thin-film bias resistors with R1 and R2 values of 10kΩ each. It operates within a junction temperature range of -40°C to +100°C and supports storage temperatures from -55°C to +150°C. The transition frequency is specified at 250MHz.
Feature Summary
- Built-in bias resistors enable inverter circuit configuration without external input resistors.
- Thin-film resistors provide complete isolation for positive input biasing.
- Design simplifies operation by requiring only on/off condition settings.
Applications
- Inverter circuits
- Interface applications
- Driver circuits
Procurement Notes
Verify the specific suffix 'TP' against official documentation to confirm packaging details such as tape and reel specifications. Ensure compatibility with standard surface mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before finalizing procurement orders.
Selection Notes
Select this component for designs requiring simplified switching logic with integrated biasing. The PNP polarity and -50V rating suit low-voltage interface tasks. Verify that the SPT package dimensions fit the target PCB layout constraints. Consider thermal dissipation limits when operating near maximum current thresholds.
Part Context
This part belongs to the DTA114E series of digital transistors from ROHM. The series includes variants like DTA114EM and DTA114EE, differing primarily in package types such as VMT3 or EMT3. The DTA114ESATP specifically utilizes the SPT package, offering a compact solution for space-constrained electronic designs.
Replacement Considerations
DTA114ESA
FAQ
What is the structure of the DTA114ESATP?
It is a PNP epitaxial planar silicon transistor with built-in resistors.
What are the resistance values of the internal bias resistors?
Both R1 and R2 are 10kΩ.
What is the maximum power dissipation?
The maximum power dissipation is 150mW at 25°C ambient temperature.
