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The DTA114EU3T106 is a single PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323 (UMT3) surface-mount package. It integrates bias resistors with a typical input resistance of 10 kOhms and an emitter-base resistance of 10 kOhms, resulting in a resistor ratio of 1. The device supports a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 30 at -5 mA and -5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 200 mW. The saturation voltage is specified at -300 mV, with an emitter-base breakdown voltage of -3 V.
Verify the specific suffix T106 to confirm the reel packaging quantity of 3000 units. Ensure compatibility with SOT-323 footprint requirements during PCB layout. Confirm RoHS compliance status through official manufacturer documentation prior to integration into regulated assemblies.
Select this component when a PNP configuration with equal base and emitter resistors is required. The 10 kOhm input resistance offers a standard drive impedance. Verify that the -50 V voltage rating meets the system's negative supply constraints and that the 200 mW thermal dissipation is sufficient for the intended duty cycle.
This part belongs to the DTA114 series of bias resistor built-in transistors from ROHM. It shares the UMT3 package form factor with other variants in the family but differs in polarity and internal resistor values. It serves as a compact solution for replacing discrete transistor-resistor networks in space-constrained designs.
Direct substitutes within the same polarity and package include DTA114GU3T106 or DTA114WU3T106, though internal resistor ratios differ. Cross-polarity equivalents such as DTC114EU3T106 require circuit topology inversion. Verify pinout consistency before substitution.