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DTA114EUBHZGTL is a PNP digital transistor manufactured by Rohm Semiconductor, featuring built-in bias resistors for simplified circuit design. It operates with a collector current of 100 mA and a transition frequency of 250 MHz. The device has a maximum power dissipation of 200 mW and includes R1 and R2 resistors, each valued at 10 kOhms. It meets AEC-Q101 automotive grade standards and is housed in a UMT3F (SC-85) surface-mount package. The saturation voltage is 300 mV at 500 µA base current and 10 mA collector current, with a minimum DC current gain of 30 at 5 mA and 5 V.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance documentation prior to procurement. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during soldering processes.
Select this component for designs requiring PNP switching with integrated biasing. Verify that the UMT3F package dimensions fit the PCB footprint constraints. Ensure the 100 mA collector current rating exceeds the maximum load requirements. Check thermal management needs against the 200 mW power dissipation limit in the intended operating environment.
This part belongs to the DTA114 series of pre-biased transistors from Rohm Semiconductor. It is designed as a drop-in replacement for discrete resistor-transistor networks. The specific suffix indicates the taping packaging format and regional manufacturing specifications.
DTA114EU3HZGT106 is listed as a similar specification replacement with identical electrical parameters but utilizes a UMT3 package instead of UMT3F.