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The DTA114TE3TL is a PNP digital transistor from the ROHM DTA114T series, featuring an integrated bias resistor (R1) of 10 kΩ. It operates with a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. The device has a power dissipation rating of 150 mW at 25°C ambient temperature and supports a maximum junction temperature of 150°C. It utilizes an SOT-416 surface-mount package and offers a transition frequency (fT) of 250 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging format and reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure storage conditions remain within recommended limits to maintain solderability before use.
Select this component for single PNP digital switching applications requiring a 10 kΩ base resistor. Verify that the required collector current does not exceed -100 mA and the voltage stays within the -50 V limit. Consider the 150 mW power dissipation capability relative to the thermal environment.
This part belongs to the DTA114T series of Bias Resistor Built-in Transistors (BRT). The series includes complementary NPN types (DTC114T) and various package options such as SOT-723, SOT-323, and SOT-346. The TE3 variant specifically denotes the SOT-416 package configuration.
Complementary NPN equivalent: DTC114T series. Other package variants in the same electrical family include DTA114TM (SOT-723), DTA114TU3 (SOT-323), and DTA114TKA (SOT-346).