SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTA114TEBTL is a PNP pre-biased transistor manufactured by ROHM Semiconductor, housed in an EMT3F (SOT-416FL) surface-mount package. It features a maximum collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device includes a built-in base resistor with a typical value of 10 kOhms. Key electrical parameters include a DC current gain (hFE) minimum of 100 at -1 mA and -5 V, a transition frequency of 250 MHz, and a power dissipation rating of 150 mW. The component operates within a temperature range up to +150°C.
Verify the specific ordering suffix and packaging type when sourcing. Confirm RoHS compliance status and long-term availability plans prior to procurement. Ensure the selected variant matches the required package code and terminal count for the target application.
Select this component for designs requiring a compact PNP digital transistor with integrated biasing. Consider the 150 mW power dissipation limit and -50 V voltage rating during thermal and electrical analysis. Verify compatibility with the SOT-416FL footprint and ensure the 10 kOhm input resistance aligns with the driving source requirements.
This part belongs to the DTA series of digital transistors from ROHM Semiconductor. These components are designed to replace discrete resistor-transistor combinations, reducing board space and assembly complexity. The DTA114TEBTL specifically offers PNP polarity with a single built-in resistor configuration.
DTA114TE3TL is a similar PNP digital transistor with identical pinout and package specifications. Verify parameter equivalence before substitution.