DTA114TET1

Overview

The DTA114TET1 is a PNP Silicon Bias Resistor Transistor (BRT) from onsemi, housed in the SC-75/SOT-416 package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = ∞). Key electrical ratings include a collector-emitter voltage (VCEO) of 50 Vdc, a collector current (IC) of 100 mAdc, and a total device dissipation (PD) of 200 mW at 25°C. The DC current gain (hFE) ranges from 35 to 80 at IC = 5.0 mA and VCE = 10 V. The junction temperature range is -55°C to +150°C.

Feature Summary

• Integrates a PNP transistor with a monolithic bias network containing a 10 kΩ series base resistor and an open base-emitter path.
• Designed to replace discrete devices and external resistor networks, reducing system cost and board space.
• Features modified gull-winged leads in the SC-75/SOT-416 package to absorb thermal stress during wave or reflow soldering.

Applications

• Interface circuits requiring simplified biasing
• Driver applications for low power surface mount designs
• Automotive electronics requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'G' suffix indicates a Pb-Free package variant, while standard versions may differ in environmental compliance markings. Confirm the manufacturer's current supply status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for applications needing a PNP digital transistor with a 10 kΩ input resistor and no internal base-emitter shunt resistor. Ensure the required collector current does not exceed 100 mA and the voltage rating accommodates up to 50 V. Verify that the SC-75 package dimensions fit the target PCB footprint and that thermal dissipation requirements are met within the specified ambient temperature range.

Part Context

This part belongs to the DTA114EET1 Series, which includes various PNP BRT configurations with different resistor values. The DTA114TET1 specifically features R1=10kΩ and R2=open. It is designed as a preferred device for future use, offering best overall value and simplified circuit design compared to discrete solutions.

Replacement Considerations

Direct pin-compatible replacements within the same series include DTA114EET1 (R2=10kΩ) and DTA124EET1 (R1=R2=22kΩ), though resistor values differ. For automotive applications requiring unique site control, verify if the 'S' prefix variant is necessary. Cross-manufacturer equivalents require careful verification of hFE ranges and resistor tolerances.

FAQ

What is the value of the internal base-emitter resistor (R2) in the DTA114TET1?

The internal base-emitter resistor (R2) is open circuit (∞), meaning there is no internal resistor connected between the base and emitter.

Is the DTA114TET1 qualified for automotive applications?

Yes, the device is AEC-Q101 qualified and PPAP capable. An 'S' prefix is available for automotive and other applications requiring unique site and control change requirements.

What is the maximum collector current for this device?

The maximum collector current (IC) is 100 mAdc.