DTA114TETL

Overview

DTA114TETL is a pre-biased NPN digital transistor manufactured by ROHM Semiconductor. It integrates a single bias resistor (R1) within the device, eliminating the need for external input resistors in inverter circuit configurations. The component features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 100 at -1 mA and -5 V, a transition frequency of 250 MHz, and a maximum power dissipation of 150 mW. The unit operates with a typical input resistance of 10 kOhms and utilizes an EMT3 surface-mount package.

Feature Summary

• Integrates a built-in bias resistor to simplify circuit design by removing the requirement for external input components.

Applications

• Inverter circuits requiring simplified input stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the selected variant matches the required packaging format and RoHS compliance status for the intended production environment.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for low-power switching applications. Confirm that the 100 mA current capacity and 50 V voltage rating align with the load requirements. Verify package dimensions against the PCB footprint constraints before finalizing the design.

Part Context

The DTA114 series consists of digital transistors with built-in bias resistors, designed to reduce board space and assembly costs. This specific model represents the NPN configuration within the family, offering complementary functionality to PNP variants like the DTA114TETL counterpart.

Replacement Considerations

Direct substitutes must maintain the NPN polarity, SOT-416/EMT3 package, and 10 kOhm internal resistance. Verify equivalent hFE and VCEO ratings to ensure functional parity in existing designs.