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DTA114TKAT146 is a single PNP digital transistor manufactured by ROHM Semiconductor, housed in an SMT3 (SOT-23) surface-mount package. It integrates a bipolar junction transistor with a built-in base resistor (R1) of 10 kΩ to simplify circuit biasing. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at -1 mA and -5 V, a transition frequency of 250 MHz, and a maximum power dissipation of 200 mW. It operates within a temperature range up to +150 °C.
Verify the specific suffix 'KAT146' against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and pinout orientation. Ensure compatibility with automated pick-and-place equipment regarding the SMT3 package dimensions. Confirm RoHS compliance status through official documentation prior to integration into regulated assemblies.
Select this component when a single-channel PNP switch with integrated biasing is required. The 10 kΩ internal resistor simplifies design compared to discrete BJT solutions. Consider the 200 mW power dissipation limit and -50 V voltage rating to ensure operation remains within safe thermal and electrical boundaries for the target application environment.
This part belongs to the DTA114 series of pre-biased transistors from ROHM. These devices are designed to replace multiple discrete components, reducing assembly complexity. The SMT3 package variant offers a balance between thermal performance and miniaturization suitable for consumer electronics and portable devices.
Cross-reference with other ROHM parts in the DTA114 family, such as DTA114EKAT146 or DTA114TUAT106, if package changes are permissible. Verify that substitute parts maintain identical pin configurations and electrical ratings to avoid redesign efforts.