SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTA114TXV3T1G is a PNP digital transistor from the DTA114EXV3T1 series, manufactured by onsemi. It integrates a single silicon transistor with a monolithic bias resistor network consisting of a base resistor (R1) and a base-emitter resistor (R2). The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 Vdc. Electrical characteristics include a DC current gain (hFE) minimum of 160 at 5.0 mA and 10 V, and a collector-emitter saturation voltage maximum of 0.25 Vdc at 10 mA. The internal resistors are R1 = 10 kΩ and R2 = infinity. It is housed in an SC-89 package (Case 463C) and supplied in tape and reel packaging.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and lead-free plating specifications prior to procurement. Ensure the source document matches the exact part number to avoid discrepancies in electrical parameters or physical dimensions.
Select this component when a compact PNP switching solution with integrated biasing is required. Verify that the 10 kΩ base resistor value aligns with the target logic drive levels. Check thermal dissipation requirements against the specified junction-to-ambient resistance values for the intended PCB pad configuration.
This component belongs to the DTA114EXV3T1 series of PNP digital transistors. The series offers various resistor combinations within the same SC-89 package footprint. The 'TX' designation specifically indicates the 10 kΩ base resistor configuration with no base-emitter resistor.
Cross-reference other members of the DTA114EXV3T1 series for alternative resistor ratios. Verify pinout compatibility with the SC-89 (Case 463C) package before substituting with devices from other manufacturers.