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The DTA114YET1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a typical resistor ratio of 0.21. Packaged in SC-75-3 (SOT-416), it supports surface mount installation and functions within a temperature range of -55°C to +150°C, with a power dissipation rating of 200 mW.
Verify the specific suffix against official datasheets to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status and lead-free packaging requirements with the manufacturer or authorized distributors before procurement.
Select this component when space reduction and simplified circuit design are priorities. Ensure the required gain and voltage ratings align with the system's operational limits. Verify that the SC-75 package footprint matches the PCB layout constraints.
This part belongs to the DTA114YE series of digital transistors designed to replace single devices and their external resistor bias networks. It is manufactured by onsemi and falls under the category of Bias Resistor Transistors (BRT).
Check for direct substitutes such as DTC114Y series for complementary NPN requirements. Verify equivalent BRT parts from other manufacturers based on matching R1/R2 ratios and hFE specifications.