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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A EMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
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Overview
The DTA114YE3HZGTL is a PNP digital transistor manufactured by ROHM Semiconductor, designed for automotive applications. It features built-in bias resistors (R1=10kΩ, R2=47kΩ) within an EMT3 (SOT-416) surface-mount package. Key electrical specifications include a collector-emitter voltage of -50V, continuous collector current of -100mA, and power dissipation of 150mW. The device operates with a DC current gain (hFE) ranging from 68 to 100 at specified test conditions. It complies with AEC-Q101 standards and supports a maximum operating temperature of +150°C.
Feature Summary
- Integrated bias resistors simplify inverter circuit design by eliminating external input components.
- Automotive-grade reliability certified under AEC-Q101 standards for high-temperature operation.
- Compact SMD packaging facilitates automated surface-mount assembly processes.
Applications
- Automotive digital logic circuits requiring robust thermal performance.
- Inverter configurations utilizing built-in biasing without external resistors.
- General-purpose switching applications in harsh environmental conditions.
Procurement Notes
Verify the specific suffix HZGTL against official ROHM documentation to confirm automotive grade classification and resistor values. Ensure compatibility with AEC-Q101 requirements if used in vehicle systems. Cross-reference datasheet revisions to validate hFE ranges and thermal characteristics prior to integration.
Selection Notes
Select this component when a PNP digital transistor with integrated biasing is required for automotive environments. Compare hFE minimums and saturation voltages against load requirements. Verify that the 150mW power dissipation limit accommodates the expected duty cycle and ambient temperature conditions.
Part Context
This part belongs to the DTA114 series of pre-biased transistors. It serves as the PNP counterpart to NPN variants like the DTC114YE3HZG. The series is characterized by compact footprints and simplified circuit topologies due to internal resistor networks.
Replacement Considerations
Direct substitutes may include other AEC-Q101 qualified PNP digital transistors in SOT-416 packages with similar R1/R2 ratios. Verify pinout compatibility and electrical limits before substitution.
