DTA114YET1G

Overview

The DTA114YET1G is a single PNP Bias Resistor Transistor (BRT) featuring an integrated monolithic bias network with R1 = 10 kΩ and R2 = 47 kΩ. It operates within a collector-emitter voltage of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device is housed in a surface-mount SC-75 package, providing a total power dissipation of 200 mW at 25°C. Electrical characteristics include a minimum DC current gain of 80 and a maximum collector-emitter saturation voltage of 0.25 Vdc. It functions across a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates a single transistor with a monolithic bias resistor network to replace discrete components.
• Reduces printed circuit board space and component count for simplified circuit design.
• Qualified for automotive applications under AEC-Q101 standards with PPAP capability.

Applications

• Automotive electronic systems requiring qualified components.
• General-purpose switching circuits utilizing pre-biased logic interfaces.
• Digital signal processing input buffering and level shifting.

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a compact PNP solution with fixed internal biasing is required. Ensure the 10 kΩ base resistor value aligns with the driving source impedance. Verify that the 50 V collector-emitter rating exceeds the maximum circuit voltage peaks.

Part Context

This part belongs to the DTA114YE series of digital transistors manufactured by onsemi. It serves as a direct replacement for discrete BJT and resistor combinations, offering a standardized alternative to custom bias networks in modern electronics manufacturing.

Replacement Considerations

SDTA114YET1G