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The DTA114YM3T5G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device features an input resistance R1 of 10 kOhms typical value and an internal resistor ratio R1/R2 of 0.21 typical. Packaged in SOT-723, it offers a power dissipation of 260 mW at 25°C and functions across a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix T5G corresponds to the tape and reel packaging configuration containing 8,000 units per reel as documented in the official onsemi datasheet. Confirm that the device marking matches the specified code for this package style. Ensure compliance with RoHS standards and Pb-free requirements during procurement validation.
Select this component when a compact PNP switching solution with built-in biasing is required. The SOT-723 package provides a small footprint suitable for space-constrained designs. Verify that the 10 kOhm input resistance aligns with the driving source capabilities and that the 50 V rating meets the system voltage requirements.
This part belongs to the DTA114YM3 series of digital transistors designed to simplify BJT bias networks. It serves as a direct replacement for discrete PNP transistors paired with external bias resistors. The series includes complementary NPN types and variants with different resistor ratios or packages, offering flexibility for various interface and driver needs.
Direct functional replacements include other PNP BRTs with similar 10k/47k resistor ratios and SOT-723 packaging. Verify pinout compatibility and electrical parameters such as VCEO and IC before substitution. Cross-reference with onsemi's recommended alternatives if the specific suffix is unavailable.