ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A UMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：UMT3
Download product information
Overview
The DTA114YUAT106 is a single NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates bias resistors within a compact UMT3 (SOT-323) surface-mount package. Key electrical specifications include a collector-emitter voltage of 50 V and a continuous collector current of 70 mA. The device features an input base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 47 kOhms. It operates with a transition frequency of 250 MHz, a DC current gain (hFE) minimum of 68 at 5 mA/5 V, and a maximum power dissipation of 200 mW.
Feature Summary
- Integrates dual bias resistors to simplify circuit design by eliminating external components.
- Provides high-speed switching capabilities suitable for digital logic applications.
- Utilizes a compact SMD package optimized for space-constrained PCB layouts.
Applications
- Digital inverter circuits
- Logic level shifting interfaces
- Switching applications in portable electronic devices
Procurement Notes
Verify the component status before procurement as this specific part number may be classified as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors, noting that supply might be limited compared to active replacements. Ensure the ordering suffix matches the required tape-and-reel quantity of 3000 units.
Selection Notes
Select this component when a single NPN digital transistor with a 47 kOhm emitter-base resistor is required. Compare against the DTC114 series variants if different resistance ratios are needed. Verify that the 70 mA collector current rating meets the load requirements, as other models in the family may support up to 100 mA.
Part Context
This component belongs to the DTC114 series of Bias Resistor Built-in Transistors (BRBTs). The 'Y' designation typically indicates a specific hFE binning or resistance ratio configuration within the ROHM portfolio. It serves as a simplified alternative to discrete BJT configurations requiring external base biasing networks.
Replacement Considerations
The DTC114YU3T106 is listed as a similar level replacement with the same pinout and package. Other potential substitutes include the DTC114EU3T106 or DTC114WU3T106, though these feature different internal resistance ratios (10k/10k and 10k/4.7k respectively) and should only be considered if the circuit tolerates the change.
FAQ
What is the resistance value of R2 in the DTA114YUAT106?
The emitter-base resistor (R2) has a value of 47 kOhms.
Is this component suitable for new designs?
No, the DTA114YUAT106 is marked as Not Recommended for New Designs (NRND).
What is the maximum collector current for this device?
The maximum continuous collector current is specified as 70 mA.
