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The DTA115ECAT116 is a single PNP digital transistor manufactured by ROHM Semiconductor, featuring integrated bias resistors within an SOT-23-3 surface-mount package. It supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. The device includes typical input resistance (R1) and emitter-base resistance (R2) values of 100 kΩ each, with a resistor ratio of 1. Key electrical characteristics include a minimum DC current gain (hFE) of 82 at IC = -5 mA and VCE = -5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 350 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix CAT116 against the official datasheet to confirm tape-and-reel packaging quantities and marking codes. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a PNP digital transistor with 100 kΩ bias resistors is required in an SOT-23-3 package. Compare hFE specifications and power dissipation limits against the load requirements. Consider the complementary NPN variant DTC115ECAT116 for push-pull configurations or matched pairs in differential applications.
This part belongs to the DTx series of digital transistors from ROHM Semiconductor. These devices combine bipolar junction transistors with internal biasing networks to replace multiple discrete components. The DTA115ECAT116 specifically serves as the PNP counterpart to the DTC115E series, providing standardized performance for general-purpose switching tasks.
Direct pin-compatible substitutes may include other PNP digital transistors with identical R1/R2 values and SOT-23-3 footprints. Verify electrical parameters such as VCEO, IC, and hFE match or exceed original specifications. Check for equivalent thermal performance and switching speed characteristics.