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The DTA115EEBTL is a single PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in biasing resistors within an EMT3F (SOT-416FL) surface-mount package. It operates with a supply voltage of -50 V and a continuous collector current of -100 mA. The device includes internal resistors R1 and R2, both rated at 100 kOhms, configured in a divider type arrangement. Key electrical parameters include a minimum DC current gain (hFE) of 82 at -5 mA and -10 V, a maximum transition frequency of 250 MHz, and a power dissipation capacity of 150 mW. The component supports a storage temperature range from -55°C to +150°C.
Verify the specific suffix 'BTL' against the manufacturer's official datasheet to confirm the tape-and-reel packaging configuration and quantity per reel. Ensure compatibility with standard SMD reflow soldering profiles. Confirm RoHS compliance status through the latest environmental declaration documents provided by ROHM Semiconductor prior to procurement.
Select this component when a PNP digital transistor with equal base and emitter bias resistors is required. The 100 kOhm resistor values are suitable for moderate drive currents. Verify that the -50 V collector-emitter voltage rating meets the system's maximum operating voltage requirements. Consider the EMT3F package dimensions for PCB layout constraints.
The DTA115EEBTL belongs to the DTA115EE series of pre-biased transistors from ROHM Semiconductor. This series is designed to replace discrete resistor-transistor networks, reducing assembly complexity. The 'BTL' suffix typically denotes the specific taping packaging format used for automated surface-mount placement.
Direct replacements must match the PNP polarity, -50 V rating, 100 kOhm internal resistance ratio, and SOT-416FL package. Verify equivalent hFE and transition frequency specifications. Cross-reference with other manufacturers' single PNP digital transistors having identical internal resistor configurations.