DTA115EET1

Overview

The DTA115EET1 is a PNP silicon Bias Resistor Transistor (BRT) from onsemi, housed in the SC-75/SOT-416 surface mount package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-base voltage (VCBO) of 50 Vdc, a collector-emitter voltage (VCEO) of 50 Vdc, and a continuous collector current (IC) of 100 mAdc. The device features an input resistance (R1) of 100 kOhms and an emitter-base resistance (R2) of 100 kOhms. Thermal characteristics specify a total device dissipation of 200 mW at 25°C on an FR-4 board with minimum pads.

Feature Summary

• Integrates a single PNP transistor with a monolithic bias network to replace individual discrete components.
• Reduces printed circuit board space and component count by eliminating external bias resistors.
• SC-75/SOT-416 package designed for low power surface mount applications with wave or reflow soldering compatibility.

Applications

• Inverter circuits
• Interface logic
• Driver stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and environmental compliance. Confirm that the SC-75/SOT-416 footprint matches the design requirements. Check for automotive qualification prefixes if unique site control changes are required. Ensure the selected variant meets the necessary thermal dissipation limits for the target application environment.

Selection Notes

Select this component when a compact solution is needed to simplify circuit design by integrating biasing resistors. The 100 kOhm resistor ratio is suitable for standard logic interface applications. Consider the 50 Vdc voltage rating and 100 mA current capability to ensure adequate headroom for the load. Evaluate the thermal resistance values to determine if additional heatsinking or pad layout modifications are necessary for high-power scenarios.

Part Context

This part belongs to the DTA114EET1 Series, which includes various PNP BRTs with different internal resistor configurations. The series is designed to offer preferred devices for future use, providing best overall value through integrated functionality. Other members of the series feature varying R1 and R2 values to accommodate different drive requirements while maintaining the same physical package and basic electrical ratings.

Replacement Considerations

Direct replacements within the same series include DTA115EET1G, which denotes a lead-free package version. For applications requiring automotive qualification, verify availability of parts with the S prefix. Cross-referencing with other manufacturers requires matching the SC-75 package, PNP polarity, and the 100k/100k resistor ratio.

FAQ

What is the function of the internal resistors in the DTA115EET1?

The device contains a monolithic bias network with a series base resistor (R1) and a base-emitter resistor (R2), both valued at 100 kOhms, which eliminates the need for external biasing components.

Can the DTA115EET1 be soldered using wave soldering?

Yes, the SC-75/SOT-416 package is designed to be soldered using either wave or reflow methods, with modified gull-winged leads to absorb thermal stress during the process.

What is the maximum collector current for this device?

The maximum continuous collector current (IC) is rated at 100 mAdc under standard operating conditions.