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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTA115EET1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration replaces discrete components to reduce system cost and board space. The device operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. It features an input forward voltage of 40 Vdc and reverse voltage of 10 Vdc. Electrical characteristics include a DC current gain (hFE) of 80 to 150 at IC = 5.0 mA, and a typical input resistance (R1) of 100 kOhms with a resistor ratio (R1/R2) of 1.0. The component is housed in an SC-75 package.
Feature Summary
- Integrates a single PNP transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor.
- Designed to replace individual devices and external resistor bias networks, reducing component count and board space.
- Available in automotive-grade configurations with S and NSV prefixes, qualified to AEC-Q101 standards and PPAP capable.
Applications
- Circuit design simplification by eliminating external biasing components.
- Applications requiring reduced board space and lower system costs.
- Automotive and other applications necessitating unique site and control change requirements.
Procurement Notes
Verify the specific ordering suffix and prefix against the manufacturer's official documentation to ensure correct package type and qualification status. Confirm that the selected variant meets all required environmental and reliability standards for the intended application before finalizing procurement decisions.
Selection Notes
Select this component when a PNP digital transistor with integrated biasing is required to simplify circuit topology. Ensure the operating voltage does not exceed the 50 Vdc collector-emitter rating and that the thermal dissipation requirements align with the SC-75 package capabilities. Verify compatibility with existing PCB footprints for the SC-75 case style.
Part Context
This part belongs to the DTA115EE series of digital transistors manufactured by onsemi. It is functionally related to other BRT devices such as MUN2136 and DTA115EM3, sharing similar internal architectures but differing in packaging and specific electrical tolerances. The series is designed to streamline the implementation of biased transistor circuits in modern electronic designs.
Replacement Considerations
Direct substitutes within the same family include DTA115EM3T5G in the SOT-723 package. Other compatible parts may include MUN2136T1G or MMUN2136LT1G, provided the package dimensions and pinout configurations are verified for mechanical compatibility.
