DTA115EM3T5G

Overview

The DTA115EM3T5G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). Both resistors are nominally 100 kOhms. The device operates with a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It features a DC current gain (hFE) ranging from 80 to 150 at 5 mA and 10 V. The component is housed in an SOT-723 surface-mount package and supports a junction temperature range from -55°C to +150°C.

Feature Summary

• Integrates a PNP transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor to replace discrete components.
• Designed to simplify circuit design by reducing board space and component count.
• Compliant with RoHS standards and manufactured using lead-free packaging.

Applications

• Replacing discrete transistor and resistor networks in logic circuits.
• Driver applications for LEDs and relays.
• Interface circuits between microprocessors and peripheral devices.

Procurement Notes

Verify the specific ordering suffix T5G corresponds to the 8000-unit tape and reel shipping configuration in the official onsemi documentation. Confirm that the SOT-723 package style matches the required footprint dimensions for the target PCB layout. Ensure compliance with Pb-Free and Halogen-Free requirements if specified by the system design constraints.

Selection Notes

Select this component when a PNP digital transistor with a 100 kOhm input resistance is required. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage. Check that the 100 mA continuous collector current capability aligns with the load requirements. Consider the SOT-723 package size relative to available board space compared to other BRT options.

Part Context

This part belongs to the DTA115E/D series of digital transistors, which also includes variants like MUN2136 and DTA115EE. These devices share the same functional architecture but differ in packaging and specific resistor values. The DTA115EM3T5G specifically utilizes the SOT-723 case style for compact surface-mount applications.

Replacement Considerations

Direct substitutes within the same family include DTA115EE and MUN2136, though package differences must be accounted for. Verify pinout compatibility and electrical parameters such as hFE and saturation voltage before substitution.

FAQ

What is the internal resistor configuration of the DTA115EM3T5G?

The device contains a monolithic bias network with a series base resistor (R1) and a base-emitter resistor (R2), both nominally valued at 100 kOhms.

What is the maximum power dissipation for the SOT-723 package?

According to the thermal characteristics table, the total device dissipation (PD) for the SOT-723 package is 260 mW at 25°C ambient temperature.

Is this component qualified for automotive applications?

The datasheet indicates that devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.