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DTA115EMT2L is a single PNP digital transistor from ROHM Semiconductor, housed in an SOT-723-3 surface-mount package. It integrates bias resistors with typical values of 10 kOhms each and a ratio of 1. Key electrical parameters include a maximum collector-emitter voltage of -50 V, continuous collector current of -100 mA, and power dissipation of 150 mW. The device features a minimum DC current gain (hFE) of 35 at -5 mA and -10 V, with a maximum operating frequency of 250 MHz. It operates within a temperature range up to +150°C.
Verify the specific suffix 'T2L' against the manufacturer's official datasheet to confirm packaging details and tape-and-reel specifications. Ensure compatibility with standard SOT-723 footprints during PCB layout. Cross-reference RoHS compliance status directly with the latest documentation provided by ROHM Semiconductor before procurement.
Select this component when a PNP digital transistor with 10 kOhm input resistance is required. Compare hFE requirements against load conditions, noting the minimum gain of 35. Verify that the 150 mW power dissipation rating suits the thermal environment. Consider the complementary NPN DTC115EMHZG if a matched pair is needed for bridge configurations.
The DTA115EMT2L belongs to the DTA115 series of pre-biased transistors. It shares the SOT-723 package form factor with other members like DTA115EETL but differs in internal resistor values and specific electrical characteristics. This series is designed to replace discrete resistor-transistor networks in space-constrained designs.
DTA115EETL offers similar functionality but utilizes an EMT3 package and different electrical ratings. DTA114EMHZG provides automotive-grade reliability with AEC-Q101 qualification. Verify pinout compatibility and exact resistor tolerances before substituting any alternative part numbers.