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The DTA115GU3T106 is a single PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323 (UMT3) surface-mount package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. The device features a typical input resistance (R1) of 100 kOhms and an emitter-base resistance (R2) of 100 kOhms. Minimum DC current gain (hFE) is specified as 82 at -5 mA and -5 V. Power dissipation is rated at 200 mW, with a maximum operating temperature of +150°C.
Verify the specific ordering suffix T106 to confirm the tape-and-reel packaging quantity of 3000 units. Ensure compatibility with standard SMT reflow profiles. Check for RoHS compliance status in the latest manufacturer datasheet before finalizing procurement specifications.
Select this component when a PNP configuration with high input impedance is required. The 100 kOhm internal resistors suit low-drive current applications. Compare against DTA114 series if lower input resistance is needed for higher drive capability.
This part belongs to the DTA115 series of pre-biased transistors from ROHM. It serves as the PNP counterpart to NPN variants like the DTC115 series. The UMT3 package code corresponds to the industry-standard SOT-323 footprint, ensuring broad availability across multiple distributors.
DTA115EU3T106 is confirmed as a direct replacement with identical pinout and package. Verify that alternative substitutes maintain the same -50 V rating and 100 kOhm resistor values to ensure circuit compatibility.