DTA115GUAT106

Overview

The DTA115GUAT106 is a single NPN digital transistor with pre-bias resistors manufactured by Rohm Semiconductor. It features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. The device includes an internal base resistor (R1) of 47 kOhms. Key electrical specifications include a DC current gain (hFE) of at least 68 at 5 mA and 5 V, and a saturation voltage of 300 mV max at 500 µA base current and 10 mA collector current. The transition frequency is 250 MHz, with a maximum power dissipation of 200 mW in a UMT3 (SOT-323) surface-mount package.

Feature Summary

• Integrated pre-bias circuitry simplifies interface design for logic signals.
• High-speed switching capability supports applications requiring fast response times.
• Compact surface-mount packaging facilitates automated assembly and space-constrained designs.

Applications

• General-purpose switching circuits
• Logic level translation interfaces
• Driver stages for small-signal loads

Procurement Notes

Verify the complete part number including the suffix AT106 to ensure correct packaging and tape-and-reel configuration. Confirm RoHS compliance status and moisture sensitivity level requirements against specific manufacturing process constraints before ordering. Cross-reference the manufacturer's latest datasheet for any updates on recommended soldering profiles or storage conditions.

Selection Notes

Select this component when a single NPN transistor with integrated base biasing is required. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Verify that the 100 mA collector current limit accommodates the load requirements. Compare the 47 kOhm internal base resistor value against the driving source capabilities to ensure adequate base drive current.

Part Context

This component belongs to the DTC1xx series of digital transistors from Rohm Semiconductor. These devices integrate a single bipolar junction transistor with one or more bias resistors to reduce board space and simplify schematic design. The DTA variant specifically denotes an NPN configuration with a base resistor, distinguishing it from PNP types or dual-resistor configurations.

Replacement Considerations

Direct substitutes may include other NPN digital transistors with similar 50 V ratings, 100 mA current capacity, and comparable internal resistance values in SOT-323 packages. Verify pinout compatibility and electrical parameters such as hFE and Vce(sat) before substitution. Consult manufacturer cross-reference lists for validated alternatives.