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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTA115TET1G is a PNP digital transistor manufactured by onsemi, belonging to the DTA115TE series. It integrates a single PNP bipolar junction transistor with a monolithic bias resistor network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration replaces discrete components, reducing board space and system cost. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 200 mW. The component is housed in an SC-75 (SOT-416) surface-mount package.
Feature Summary
- Integrates a PNP transistor with a dual-resistor bias network for simplified circuit design
- Reduces printed circuit board area by replacing multiple discrete components
- Designed for low-power surface mount applications
Applications
- General-purpose switching circuits
- Driver circuits for logic interfaces
- Battery-powered portable devices requiring space savings
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official material composition declarations. Check for End-of-Life notices as availability may be restricted. Ensure storage conditions adhere to moisture sensitivity level requirements prior to assembly.
Selection Notes
Select this component when a PNP configuration with integrated biasing is required. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit demands. Consider the SC-75 package dimensions for layout constraints. Compare against NPN alternatives like the DTC115TET1G if polarity requirements differ.
Part Context
This part belongs to the DTA115TE family of pre-biased transistors from onsemi. It shares functional similarities with the DTA114TET1G but differs in specific electrical characteristics such as input resistance values. The series is designed to streamline digital switching applications by eliminating external biasing networks.
Replacement Considerations
The DTC115TET1G serves as a functional equivalent but utilizes an NPN transistor structure instead of PNP. Designers must adjust circuit polarity accordingly. Other members of the DTA115TE series may offer variations in resistor values while maintaining similar packaging.
