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The DTA115TM3T5G is a PNP digital transistor from onsemi, belonging to the DTA115TM3 series. It integrates a single PNP bipolar junction transistor with built-in biasing resistors in an SOT-723 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistor values are typically 100 kOhms for both base (R1) and emitter (R2). Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, a maximum saturation voltage of 250 mV at 300 µA base current and 10 mA collector current, and a maximum collector cutoff current of 500 nA. Power dissipation is rated at 260 mW.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status through supplier documentation or material declarations. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage prior to soldering.
Select this component when a PNP configuration with integrated biasing is required. Compare hFE and saturation voltage parameters against load requirements. Verify that the SOT-723 footprint matches the PCB layout constraints. Consider thermal management capabilities given the 260 mW power dissipation rating.
This part belongs to the DTA115 family of pre-biased transistors manufactured by onsemi. The 'M3' suffix indicates lead-free and halogen-free construction compliant with environmental standards. The 'T5G' suffix denotes tape and reel packaging suitable for automated assembly processes.
Compatible substitutes include DTA115EM3T5G (NPN variant) and DTA115EM3T106 (different packaging). Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official cross-reference lists for validated alternatives.