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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VMT3
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Overview
DTA115TMT2L is a single PNP digital transistor manufactured by ROHM Semiconductor, housed in a VMT3 (SOT-723) surface-mount package. It integrates an internal bias resistor network with a typical input resistance of 100 kΩ. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Key electrical specifications include a minimum DC current gain (hFE) of 100 at -1 mA and -5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW.
Feature Summary
- Integrates a pre-biased resistor network to simplify circuit design by eliminating external components.
- Provides high-speed switching capabilities suitable for interface and driver applications.
- Offers compact surface-mount packaging for efficient board space utilization.
Applications
- Inverter circuits
- Interface logic drivers
- General-purpose switching applications
Procurement Notes
Verify the specific suffix 'TMT2L' against the manufacturer's official datasheet to confirm the exact reel quantity and tape specifications. Ensure the ordering part number matches the required package variant and marking code. Cross-reference the component with the latest RoHS compliance documentation provided by ROHM Semiconductor prior to procurement.
Selection Notes
Select this component when a PNP digital transistor with a 100 kΩ base resistor is required. The 50 V voltage rating and 100 mA current capacity define its operational limits. Consider the VMT3 package dimensions for layout constraints. Compare hFE characteristics against load requirements to ensure adequate drive capability within the specified temperature range.
Part Context
The DTA115TMT2L belongs to ROHM's series of pre-biased bipolar transistors designed to replace discrete resistor-transistor combinations. This family simplifies design by integrating biasing networks directly onto the silicon die. The device serves as a direct replacement for standard NPN/PNP pairs in logic interfacing roles, reducing component count and assembly complexity.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs using equivalent parameters from manufacturer cross-reference tools.
