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The DTA123ECAHZGT116 is a PNP digital transistor from ROHM Semiconductor, featuring built-in bias resistors in an SOT-23-3 package. It operates with a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device includes typical input (R1) and emitter-base (R2) resistors of 2.2 kOhms each, maintaining a 1:1 ratio. Key electrical parameters include a minimum DC current gain (hFE) of 20 at -20 mA and -5 V, a maximum operating frequency of 250 MHz, and power dissipation of 350 mW. It meets AEC-Q101 automotive standards and supports temperatures up to +150°C.
Verify the specific suffix 'HZGT116' against the manufacturer's official datasheet to confirm packaging details and RoHS compliance status. Ensure the component matches the required SOT-23-3 footprint and thermal characteristics for the target application environment before finalizing procurement.
Select this component when a PNP digital transistor with 2.2 kOhm internal biasing is required for space-constrained designs. Consider the -50 V rating and -100 mA current limit for appropriate load handling. Verify compatibility with the target operating temperature range and ensure the 250 MHz frequency response meets signal speed requirements.
This part belongs to the DTA123 series of pre-biased transistors designed for compact surface-mount applications. It serves as a complementary counterpart to NPN variants like the DTC123ECAHZG. The HZGT116 suffix indicates specific taping and reel specifications within the broader DTA123 family.
DTA123EU3HZGT106 offers similar electrical performance in a SOT-323 package. DTA123TCA provides higher hFE gain but may differ in power dissipation ratings. Verify pinout compatibility and thermal resistance when substituting.