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The DTA123EE3HZGTL is a PNP digital transistor from ROHM Semiconductor, featuring built-in bias resistors in an EMT3 (SOT-416) surface-mount package. It operates with a maximum collector current of 100 mA and a transition frequency of 250 MHz. The device has a power dissipation rating of 150 mW and meets AEC-Q101 automotive standards. Typical input resistance values are 2.2 kOhms for both R1 and R2, with a resistor ratio of 1. The DC current gain (hFE) is specified at a minimum of 20 under standard test conditions.
Verify the specific suffix against official documentation to confirm package type and tape/reel specifications. Confirm AEC-Q101 compliance requirements for your target application. Check for obsolescence status as some variants may be marked not recommended for new designs. Ensure voltage ratings match system constraints.
Select this component when a PNP configuration with equal bias resistors is required. Compare power dissipation limits against thermal management capabilities. Verify that the 250 MHz transition frequency meets signal speed requirements. Consider alternative packages if board space allows for different form factors.
This part belongs to the DTA123 series of pre-biased transistors. It shares functional similarities with other ROHM digital transistors but differs in polarity and internal resistor values. The EMT3 package is common in compact consumer and automotive electronics.
DTA123JCAHZGT116 offers similar functionality in an SOT-23 package with different resistor ratios. DTA123EU3HZGT106 provides comparable performance in an SOT-323 case. Verify pinout compatibility before substitution.