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The DTA123EEBTL is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates in the SOT-416FL (EMT3F) surface-mount package with dimensions of 1.6x1.6 mm. Key electrical parameters include a collector current of -0.1 A, supply voltage range from 1 V to -50 V, and power dissipation of 0.15 W. The device offers a minimum DC current gain (hFE) of 20 and input resistance values of either 1 kΩ or 2.2 kΩ for both R1 and R2.
Verify the specific resistor ratio variant required, as the base part number may correspond to different internal resistance configurations such as 1kΩ/1kΩ or 2.2kΩ/2.2kΩ. Confirm package authenticity against the SOT-416FL specification and ensure compliance with RoHS directives prior to integration into final assemblies.
Select this component when a compact PNP solution with integrated biasing is needed for low-current switching. Ensure the required hFE meets the minimum threshold of 20 for the intended load conditions. Verify that the 0.15 W power dissipation rating suffices for the thermal environment of the target application.
This component belongs to ROHM's standard digital transistor series, designed to replace discrete resistor-transistor combinations. It simplifies layout by combining a PNP BJT with two internal resistors in a single small outline package, reducing board space and assembly steps compared to separate components.
DTA123EETL serves as a similar level replacement with identical pinout and package specifications. Both parts share the same polarity and general electrical characteristics, allowing for direct substitution in existing designs without schematic modifications.