DTA123EEBTL

DTA123EEBTL

$0.19
  • Description:TRANS PREBIAS PNP 50V 0.1A EMT3F
  • Series:-

SKU:6d27574001b0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A EMT3F
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-89, SOT-490
  • Supplier Device Package:EMT3F (SOT-416FL)

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DTA123EEBTL

Overview

The DTA123EEBTL is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates in the SOT-416FL (EMT3F) surface-mount package with dimensions of 1.6x1.6 mm. Key electrical parameters include a collector current of -0.1 A, supply voltage range from 1 V to -50 V, and power dissipation of 0.15 W. The device offers a minimum DC current gain (hFE) of 20 and input resistance values of either 1 kΩ or 2.2 kΩ for both R1 and R2.

Feature Summary

  • Integrates bias resistors to eliminate external components for inverter circuits
  • Compact SMD footprint suitable for space-constrained designs
  • Single polarity configuration for straightforward signal inversion

Applications

  • Signal inversion circuits
  • Driver circuits for logic interfaces
  • Switching applications requiring simplified bias networks

Procurement Notes

Verify the specific resistor ratio variant required, as the base part number may correspond to different internal resistance configurations such as 1kΩ/1kΩ or 2.2kΩ/2.2kΩ. Confirm package authenticity against the SOT-416FL specification and ensure compliance with RoHS directives prior to integration into final assemblies.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is needed for low-current switching. Ensure the required hFE meets the minimum threshold of 20 for the intended load conditions. Verify that the 0.15 W power dissipation rating suffices for the thermal environment of the target application.

Part Context

This component belongs to ROHM's standard digital transistor series, designed to replace discrete resistor-transistor combinations. It simplifies layout by combining a PNP BJT with two internal resistors in a single small outline package, reducing board space and assembly steps compared to separate components.

Replacement Considerations

DTA123EETL serves as a similar level replacement with identical pinout and package specifications. Both parts share the same polarity and general electrical characteristics, allowing for direct substitution in existing designs without schematic modifications.

DTA123EEBTLDTA123EEBTL
$0.19
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