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The DTA123EET1G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration replaces discrete components to reduce system cost and board space. The device features a collector-emitter voltage rating of 50 Vdc and a continuous collector current of 100 mAdc. It includes an input forward voltage of 12 Vdc and reverse voltage of 10 Vdc. Electrical characteristics specify a typical DC current gain of 15 at 5 mA and 10 V, with a maximum saturation voltage of 0.25 Vdc at 10 mA collector current. The part is housed in an SC-75 package.
Verify the specific ordering suffix 'T1G' corresponds to the SC-75 package and tape & reel shipping configuration as documented in the manufacturer's ordering information table. Confirm that the required variant meets the specific thermal and electrical constraints for the target application environment before finalizing procurement specifications.
Select this component when a compact PNP solution with integrated biasing is required for space-constrained designs. Ensure the 50 V collector-emitter voltage and 100 mA continuous current ratings exceed the maximum operational limits of the circuit. Verify that the SC-75 package dimensions align with the available footprint on the printed circuit board layout.
This device belongs to the DTA123E family of digital transistors manufactured by onsemi. The family includes variants such as DTA123EM3 and MUN2131, which share similar electrical characteristics but differ in packaging options like SOT-723 or SC-59. The DTA123EET1G specifically utilizes the SC-75 case style for surface-mount assembly.
Direct replacements within the same family include DTA123EE and DTA123EM3, provided the package type matches the PCB footprint. Cross-family substitutes like MUN2131 offer identical electrical performance but require verification of pinout compatibility and physical package dimensions before substitution.